Solid-state electronics, micro and nanoelectronics

Influence of Plasma-Chemical Modification of the Surface on Transverse Electron Transport and VAC of Silicon MIS Structures

Background and Objectives: The laws governing the modification of the current-voltage characteristics of the metal-insulatorsemiconductor structures due to the formation of embedded surface potentials are investigated. Surface potentials are formed when an atomically clean surface of silicon crystals is produced using microwave plasma micromachining. The aim of the work is to study the effect of plasma micromachining in various chemically active gaseous media on the properties of silicon MIS structures.

Carbon Film Nanocomposite for High-Current Field Electron Sources

Authors: Yafarov R. K., Shanygin V. Y., Nefedov D. V.

Background and Objectives: Requirements and problems are formulated when creating cathode materials for high-current emission electronics. It has been shown that to create autocathodes with a current density of up to 100 A/cm2 and above, the development of new nanostructured carbon materials with a surface density of nanodiamond edges of not less than 106–108 cm-2 is necessary. Using a non-equilibrium low-pressure microwave plasma, the regions of regimes for obtaining carbon film coatings containing the diamond and graphite phases in various volume ratios are determined.

Phonon-Drag Thermopower in a Quantum Wire with Parabolic Confinement Potential for Electrons

Authors: Hasanov K. А., Huseynov J. I., Dadashova V. V., Nabiyev A. E., Abbasov I. I.

Background and Objectives: A quantitative theory of the phonondrag thermopower for one-dimensional degenerate electron gas in a quantum wire with parabolic confinement potential is presented. The temperature gradient is directed along the axis of the quantum wire. Due to the confinement, the energy spectrum and the wave function of the electron change substantially. It is assumed that the Fermi level is located between the zeroth and the first of the size quantization.

Influence of Argon Pressure on Texture and Microstructure of Cobalt Films Produced by Dc-Sputtering

Authors: Dzhumaliev А. S., Nikulin Y. V.

Background and Objectives: The development of methods of textured Co film formation is of practical interest in the field of creating media with perpendicular recording of information or lateral spin-valve structures. Despite a rather wide study of the growth conditions effects on the microcrystalline structure of sputtered cobalt films, the possibility of changing the texture and microstructure via a change of the gas pressure has not been discussed.

Magnetic Properties of Textured NiFe(111) and NiFe(200) Films

Authors: Dzhumaliev А. S., Nikulin Y. V.

Thickness dependencies (d м 20–370 nm) of the saturation magnetization 4πМ, the ferromagnetic resonance linewidth ΔH, the coercivity field Hc and the shape of hysteresis loops were investigated for Ni80Fe20 (NiFe) films with (200) texture. The thickness dependencies of magnetic parameters for NiFe(200) films were compared with the dependencies 4πМ(d), ΔH(d) and Hc(d) for NiFe(111) films with strong (111) texture and polycrystalline NiFe films.

Magnonic Logic Devices

Authors: Khitun A. G., Kozhanov A. Е.

Background and Objectives: There is a big impetus for the development of novel computational devices able to overcome the limits of the traditional transistor-based circuits. The utilization of phase in addition to amplitude is one of the promising approaches towards more functional computing architectures. In this work, we present an overview on magnonic logic devices utilizing spin waves for information transfer and processing.

The Graphene Based Terahertz Transistor

Authors: Davidovich M. V., Glukhova O. Е., Slepchenkov M. М.

Background and Objectives: Due to the lack of a substantial energy gap in graphene nanoribbons there are difficulties to create a fast-switching transistors for digital circuits using them. In a number of recent works, the usage of graphene nanoribbons in tunneling transistors, field effect transistors, transistors with negative resistance and in generators with pumping has been proposed for amplification of analog signals.