Izvestiya of Saratov University.
ISSN 1817-3020 (Print)
ISSN 2542-193X (Online)


Formation feature of organic polyelectrolyte layer on illuminated semiconductor substrate

Introduction: The results of studying the formation processes of the Si/SiO2/polyethyleneimine hybrid structure at semiconductor substrate photostimulation during the polyethyleneimine adsorption are presented. The aim of the work was to determine the formation relationships of an organic polyelectrolyte layer onto illuminated semiconductor substrate as well as to describe the electronic processes in a hybrid structure responsible for organic layer parameters.


Представлены результаты исследования процессов, происходящих при формировании гибридной структуры Si/SiO2/полиэтиленимин в условиях фотостимуляции полупроводниковой подложки при адсорбции на неё полиэтиленимина. Целью работы являлось определение закономерностей формирования органического полиэлектролитного слоя на освещаемой полупроводниковой подложке и описание электронных процессов в гибридной структуре, ответственных за параметры полученного покрытия.

Nonequilibrium the Microwave Plasma of Low Pressure in Scientific Researches and Development Micro and Nanoelectronics

Advantages and benefits realization use of nanotechnology of high ionized low-energy microwave plasma of low pressure are described. It presents the fact that one installation on the basis of microwave plasma can replace up 4 to 5 installations with usual high-frequency excitation of the gas discharge.

Voltage-capacitance Characteristics of MIS-structures Based on Ferroelectric Films

Metal–ferroelectric–semiconductor (MFS) heterostructures are created on n-type and p-type silicon substrates. Electronically-controlled capacitors are realized in MFS heterostructures. Measured parameters of electronically-controlled capacitors at 50 V bias voltage showed, that the stroke of voltage-capacitance characteristics of capacitors on the p-type silicon mirror reflexion of the stroke of voltage-capacitance characteristics of capacitors on the n-type silicon.