Izvestiya of Saratov University.

Physics

ISSN 1817-3020 (Print)
ISSN 2542-193X (Online)


For citation:

Bilobrova O. I., Galushka V. V., Karagaychev A. L., Polyanskaya V. P., Sidorov V. I., Terin D. V. Nanostructured Porous Silicon Layers Formation at Low Doses of γ-Radiation. Izvestiya of Sarat. Univ. Physics. , 2019, vol. 19, iss. 4, pp. 312-316. DOI: 10.18500/1817-3020-2019-19-4-312-316

This is an open access article distributed under the terms of Creative Commons Attribution 4.0 International License (CC-BY 4.0).
Published online: 
02.12.2019
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English
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535.375.5:537.533.35:539.23:54-7

Nanostructured Porous Silicon Layers Formation at Low Doses of γ-Radiation

Autors: 
Bilobrova Olga Iakovlevna, Saratov State University
Galushka Victor Vladimirovich, Saratov State University
Karagaychev Andrey Leonidovich, State Health Institution “Regional Clinical Oncology Dispensary”
Polyanskaya Valentine Petrovna, Saratov State University
Sidorov Vasiliy Ivanovich, Saratov State University
Terin Denis Vladimirovich, Saratov State University
Abstract: 

We present results of experimental study of nanoporous Si (SiNР) structure formation by using the method of metal-stimulated chemical etching upon irradiation with small doses of γ-radiation directly in the process of production (in situ). It is shown that the radiation leads to an increase of the crystallization of SiNP structures obtained on previously irradiated substrates. Apparently, this can be explained by a decrease in the initial defectiveness of the silicon substrate due to irradiation with small doses of γ-radiation.

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