Izvestiya of Saratov University.


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Belobrovaya O. Y., Galushka V. V., Karagaychev A. L., Zharkova E. A., Polyanskaya V. P., Sidorov V. I., Terin D. V., Mantsurov A. A. Nanostructured Porous Silicon Layers Formation at Low Doses of γ-Radiation. Izvestiya of Sarat. Univ. Physics. , 2019, vol. 19, iss. 4, pp. 312-316. DOI: 10.18500/1817-3020-2019-19-4-312-316

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Nanostructured Porous Silicon Layers Formation at Low Doses of γ-Radiation

Belobrovaya Olga Yakovlevna, Saratov State University
Galushka Victor Vladimirovich, Saratov State University
Karagaychev Andrey Leonidovich, State Health Institution “Regional Clinical Oncology Dispensary”
Zharkova Elvira A., Saratov State University
Polyanskaya Valentine Petrovna, Saratov State University
Sidorov Vasiliy Ivanovich, Saratov State University
Terin Denis Vladimirovich, Saratov State University
Mantsurov Anton A., Saratov State University

We present results of experimental study of nanoporous Si (SiNР) structure formation by using the method of metal-stimulated chemical etching upon irradiation with small doses of γ-radiation directly in the process of production (in situ). It is shown that the radiation leads to an increase of the crystallization of SiNP structures obtained on previously irradiated substrates. Apparently, this can be explained by a decrease in the initial defectiveness of the silicon substrate due to irradiation with small doses of γ-radiation.

  1. Huang Z., Geyer N., Werner P., Gösele U. Metal-Assisted Chemical Etching of Silicon: A Review. Adv. Mater., 2011, no. 23, pp. 285–308.
  2. Meicheng Lia, Yingfeng Lia, Wenjian Liua, Luo Yueb, Ruike Lia, Younan Luoa, Mwenya Trevora, Bing Jianga, Fan Baia, Pengfei Fua, Yan Zhaoc, Chao Shenc, Joseph Michel Mbenguea. Metal-assisted chemical etching for designable monocrystalline silicon nanostructure. Materials Research Bulletin, 2016, vol. 76, pp. 436–449.
  3. Yuliang He, Chenzhong Yin, Guangxu Cheng, Luchun Wang, Xiangna Liu The structure and properties of nanosize crystalline silicon fi lms. J. Appl. Phys., 1994, vol. 75, no. 2, pp. 797–803.
  4. Cao G., Wang Y. Nanostructures and Nanomaterials: Synthesis, Properties, and Applications. 2nd ed. World Scientifi c Publishing Company, 2011, book 2, 596 p. (World Scientifi c Series in Nanoscience and Nanotechnology).
  5. Kotkovsky G. E., Kuzishchin Yu. A., Nabieva I. R., Martynov I. L., Chistyakova A. A. Photophysical properties of porous silicon and its application in engineering and biomedicine. Yadernaya fi zika i inzhiniring [Nuclear Physics and Engineering], 2013, vol. 4, no. 2, pp. 174– 192 (in Russian). DOI: https://doi.org/10.1134/S2079562913020073
  6.  Gonchar K. A., Kitaeva V. Y., Zharik G. A., Eliseev A. A., Osminkina L. A. Structural and Optical Properties of Silicon Nanowire Arrays Fabricated by Metal Assisted Chemical Etching With Ammonium Fluoride. Front. Chem., 2019, vol. 6, pp. 1–7. DOI: https://doi.org/10.3389/fchem.2018.00653
  7. Galushka V. V., Belobrovaya O. Ya., Bratashov D. N., Kondrateva O. Yu., Polyanskaya V. P., Sidorov V. I., Yagudin I. T., Terin D. V. Gamma-Radiation Monitoring of Luminescent Porous Silicon for Tumor Imaging. BioNanoScience, 2018, vol. 8, no. 3, pp. 818–822.
  8. Bilenko D. I., Belobrovaya O. Ya., Terin D. V., Galushka V. V., Galushka I. V., Zharkova E. A., Polyanskaya V. P., Sidorov V. I., Yagudin I. T. Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon. Semiconductors, 2018, vol. 52, no. 3, pp. 331–334.
  9. Galushka V. V., Zharkova E. A., Terin D. V., Sidorov V. I., Khasina E. I. Mechanisms of frequency-dependent conductivity of mesoporoussilicon at γ-irradiation with small doses. Tech. Phys. Lett., 2019, vol. 45, pp. 533–536.
  10. Astrova E. V., Vitman R. F., Emtsev V. V. Effect of γ-radiation on the properties of porous silicon. Semiconductors, 1996, vol. 30, no. 3, pp. 279–286.
  11. Mamontov A. P., Chernov I. P. Small Dose Ionizing Radiation Effect. Tomsk, Del’taplan Publ., 2009. 286 p. (in Russian).
  12. Chernov I. P., Mamontov A. P., Korotchenko I. A. Radiation Ordering of the Structure of Imperfect Semiconductor Crystals. Sov. Phys. Semicon., 1980, vol.14, no. 11, pp. 1346–1348 (in Russian).
  13. Chernov I. P., Momontov A. P., Cherdantsev P. A., Chakhlov B. V. Ordering the crystal structure by ionizing radiation. Russ. Phys J., 1994, vol. 37, no. 12, pp. 1161–1168 (in Russian). DOI: https://doi.org/10.1007/BF00569797
  14. Chernov I. P., Mamontov A. P. Ordering of the crystal structure by ionizing radiation (the effect of small doses of ionizing radiation.) Izv. Tomsk. Рolitekhn. Univers. Inzhiniring georesursov, 2000, vol. 303, iss. 1, pp. 74–80 (in Russian).
  15. Ushakov V. V., Dravin V. A., Mel’nik N. N., Karavanskii V. A., Konstantinova E. A., Timoshenko V. Yu. Radiation Resistance of Porous Silicon. Semiconductors, 1997, vol. 31, no. 9, pp. 966–968.
  16. Chernov I. P., Mamontov A. P., Betaki A. L. Anomalous effect of small doses of gamma radiation on metals and alloys. Atomic Energy, 1984, vol. 57, iss. 1, pp. 56–58 (in Russian).
  17. Ismail Khalaf Abbas, Laith Ahmed Najam, Abd UIkkahliq Auobsulaiman. The Effect of Gamma Irradiation on the Structural Properties of Porous Silicon. International Journal of Physics, 2015, vol. 3, no. 1, pp. 1–7.
  18. Belobrovaya O. Ya., Galushka V. V., Galushka I. V., Zharkova E. A., Polyanskaya V. P., Sidorov V. I., Terin D. V., Yagudin I. T. Change in the parameters of porous silicon upon irradiation of the substrate. In: Nanostructures in condensed matter: collection of scientific articles. Minsk, A. V. Luikov Heat and Mass Transfer Institute of NAS of Belarus, 2018, pp. 291–294 (in Russian).