For citation:
Belobrovaya O. Y., Galushka V. V., Karagaychev A. L., Zharkova E. A., Polyanskaya V. P., Sidorov V. I., Terin D. V., Mantsurov A. A. Nanostructured Porous Silicon Layers Formation at Low Doses of γ-Radiation. Izvestiya of Saratov University. Physics , 2019, vol. 19, iss. 4, pp. 312-316. DOI: 10.18500/1817-3020-2019-19-4-312-316
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Published online:
02.12.2019
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English
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535.375.5:537.533.35:539.23:54-7
Nanostructured Porous Silicon Layers Formation at Low Doses of γ-Radiation
Autors:
Belobrovaya Olga Yakovlevna, Saratov State University
Galushka Victor Vladimirovich, Saratov State University
Karagaychev Andrey Leonidovich, State Health Institution “Regional Clinical Oncology Dispensary”
Zharkova Elvira A., Saratov State University
Polyanskaya Valentine Petrovna, Saratov State University
Sidorov Vasiliy Ivanovich, Saratov State University
Terin Denis Vladimirovich, Saratov State University
Mantsurov Anton A., Saratov State University
Abstract:
We present results of experimental study of nanoporous Si (SiNР) structure formation by using the method of metal-stimulated chemical etching upon irradiation with small doses of γ-radiation directly in the process of production (in situ). It is shown that the radiation leads to an increase of the crystallization of SiNP structures obtained on previously irradiated substrates. Apparently, this can be explained by a decrease in the initial defectiveness of the silicon substrate due to irradiation with small doses of γ-radiation.
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Reference:
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Received:
27.09.2019
Accepted:
18.10.2019
Published:
02.12.2019
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