Izvestiya of Saratov University.
ISSN 1817-3020 (Print)
ISSN 2542-193X (Online)

in situ

Effect of Small Doses of Gamma Radiation on the Optical Properties of Nanostructured Silicon Obtained by Metal-Stimulated Chemical Etching in situ

Background and Objectives: Porous silicon nanowires (SiNP) obtained by the method of metal stimulated chemical etching (EE method) are of great interest. The physical properties of this material depend significantly on the morphology of the nanostructures and their sizes. Given in the literature data on the effect of small doses of ionizing radiation on metals and alloys and the effect of irradiation on the properties of porous silicon and SiNP, makes sense to modify not only the substrate, but also the SiNP layer during its formation by irradiation.

Влияние малых доз гамма-излучения на оптические свойства наноструктурированного кремния, полученного методом металл стимулированного химического травления in situ

Исследованы оптические и структурные свойства образцов пористого кремния, полученных методом металл-стимулированного химического травления при облучении малыми дозами γ-квантов непосредственно в процессе его формирования in situ. Контроль in situ образцов указывает на влияние не только дозы облучения образующегося слоя на величину полного отражения, но и дозы предварительного облучения подложки.

Nanostructured Porous Silicon Layers Formation at Low Doses of γ-Radiation

We present results of experimental study of nanoporous Si (SiNР) structure formation by using the method of metal-stimulated chemical etching upon irradiation with small doses of γ-radiation directly in the process of production (in situ). It is shown that the radiation leads to an increase of the crystallization of SiNP structures obtained on previously irradiated substrates. Apparently, this can be explained by a decrease in the initial defectiveness of the silicon substrate due to irradiation with small doses of γ-radiation.