Izvestiya of Saratov University.

Physics

ISSN 1817-3020 (Print)
ISSN 2542-193X (Online)

For citation:

Devitsky O. V. Effect of nitrogen pressure on the composition and structure of thin films GaAs1 – x – yNxBiy. Izvestiya of Saratov University. Physics , 2023, vol. 23, iss. 4, pp. 365-370. DOI: 10.18500/1817-3020-2023-23-4-365-370, EDN: LQOJMC

This is an open access article distributed under the terms of Creative Commons Attribution 4.0 International License (CC-BY 4.0).
Published online: 
25.12.2023
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Language: 
English
Heading: 
Nanotechnologies, nanomaterials and metamaterials
Article type: 
Article
UDC: 
539.23
DOI: 
10.18500/1817-3020-2023-23-4-365-370
EDN: 
LQOJMC

Effect of nitrogen pressure on the composition and structure of thin films GaAs1 – x – yNxBiy

Autors: 
Devitsky Oleg V., Federal Research Center the Southern Scientific Centre of the Russian Academy of Sciences
Abstract: 

Thin films of GaAs1 – x – yNxBiy were deposited on a GaAs (100) substrate by pulsed laser deposition using an argon-nitrogen gas mixture at a pressure ranging from 1 to 60 Pa. The film thickness is found to decrease from 527 to 127 nm as the pressure of the argon-nitrogen gas mixture increased from 20 Pa to 60 Pa due to reflection and scattering of the plasma torch flow on nitrogen and argon atoms. The increase in pressure results in a significant decrease in the size and density of droplets on the film surface. All samples exhibit a polycrystalline structure, and the film obtained at a pressure of 60 Pa exhibits the highest crystalline perfection. The VASP software package was used to calculate theoretically the diffractogram for a (2×2×2) GaAs0.889N0.037Bi0.074 supercell, and it has been observed that the width at half maximum intensity for the GaAsNBi (004) reflection decreases with increasing pressure of the argon-nitrogen gas mixture. The nitrogen concentration in the thin film is found to increase linearly with the increase in the pressure of the argon-nitrogen gas mixture, which was established using X-ray diffraction and photoluminescence methods. The composition of the film obtained at a pressure of 60 Pa is determined to be GaAs0.957N0.012Bi0.021.

Key words: 
thin films
pulsed laser deposition
III–V-N-Bi
GaAs1 – x – yNxBiy
x-ray diffraction
scanning electron microscopy
Acknowledgments: 
The publication was prepared as part of the implementation of the state task “Development of new semiconductor materials based on multicomponent solid solutions for photonic, optoelectronic and microwave applications” (state registration number 122020100326-7), as well as using the resources of the collective use center of the North Caucasus Federal University and the financial support of the Ministry of Science and Higher Education of the Russian Federation, unique project identifier RF-2296.61321X0029 (agreement No. 075-15-2021-687).
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Received: 
09.06.2023
Accepted: 
25.09.2023
Published: 
25.12.2023
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