Izvestiya of Saratov University.

Physics

ISSN 1817-3020 (Print)
ISSN 2542-193X (Online)


For citation:

Chucheva G. V., Afanasyev M. S., Anisimov I. A., Georgieva A. I., Levashov S. A., Nabiyev A. E. Determining Parameters of Planar Capacitors Based of Thin Film Ferroelectric Materials. Izvestiya of Sarat. Univ. Physics. , 2012, vol. 12, iss. 2, pp. 8-11. DOI: 10.18500/1817-3020-2012-12-2-8-11

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Russian
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537.9

Determining Parameters of Planar Capacitors Based of Thin Film Ferroelectric Materials

Autors: 
Chucheva Galina Viktorovna, IRE im. V.A.Kotel'nikova RAN
Afanasyev Mikhail Sergeevich, IRE im. V.A.Kotel'nikova RAN
Anisimov Ilya Andreevich, IRE im. V.A.Kotel'nikova RAN
Georgieva Anastasia Igorevna, IRE im. V.A.Kotel'nikova RAN
Levashov Sergey Aleksandrovich, IRE im. V.A.Kotel'nikova RAN
Nabiyev Asef Enver Ogly, Azerbaijan State Pedagogical University
Abstract: 

Experimental results suggest that in the Ni/Ba0.8Sr0.2TiO3/MgO structure with linear sizes of 150 ×150 mm can be realized by planar capacitor elements of variability over a range of capacity from 0.02 pF to 3.0 pF, which increased capacity is achieved by increasing the number of electrode sections.

Reference: 
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