For citation:
Chucheva G. V., Afanasyev M. S., Anisimov I. A., Georgieva A. I., Levashov S. A., Nabiyev A. E. Determining Parameters of Planar Capacitors Based of Thin Film Ferroelectric Materials. Izvestiya of Saratov University. Physics , 2012, vol. 12, iss. 2, pp. 8-11. DOI: 10.18500/1817-3020-2012-12-2-8-11
This is an open access article distributed under the terms of Creative Commons Attribution 4.0 International License (CC-BY 4.0).
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537.9
Determining Parameters of Planar Capacitors Based of Thin Film Ferroelectric Materials
Autors:
Chucheva Galina Viktorovna, Institute of Biochemistry and Physiology of Plants and Microorganisms, Saratov Scientific Centre of the Russian Academy of Sciences (IBPPM RAS)
Afanasyev Mikhail Sergeevich, Institute of Biochemistry and Physiology of Plants and Microorganisms, Saratov Scientific Centre of the Russian Academy of Sciences (IBPPM RAS)
Anisimov Ilya Andreevich, Institute of Biochemistry and Physiology of Plants and Microorganisms, Saratov Scientific Centre of the Russian Academy of Sciences (IBPPM RAS)
Georgieva Anastasia Igorevna, Institute of Biochemistry and Physiology of Plants and Microorganisms, Saratov Scientific Centre of the Russian Academy of Sciences (IBPPM RAS)
Levashov Sergey Aleksandrovich, Institute of Biochemistry and Physiology of Plants and Microorganisms, Saratov Scientific Centre of the Russian Academy of Sciences (IBPPM RAS)
Nabiyev Asef Enver Ogly, Azerbaijan State Pedagogical University
Abstract:
Experimental results suggest that in the Ni/Ba0.8Sr0.2TiO3/MgO structure with linear sizes of 150 ×150 mm can be realized by planar capacitor elements of variability over a range of capacity from 0.02 pF to 3.0 pF, which increased capacity is achieved by increasing the number of electrode sections.
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Reference:
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- Спектор Н. Оценка допустимой мощности в полосковой линии // Полосковые системы сверхвысоких частот / пер. с англ. ; под ред. В. И. Сушкевича. М. : Иностр. лит., 1959. C.160–172.
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