Izvestiya of Saratov University.

Physics

ISSN 1817-3020 (Print)
ISSN 2542-193X (Online)

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Skripal A. V., Ponomarev D. V., Komarov A. A., Sharonov V. E. Tamm resonances control in one-dimensional microwave photonic crystal for measuring parameters of heavily doped semiconductor layers. Izvestiya of Saratov University. Physics , 2022, vol. 22, iss. 2, pp. 123-130. DOI: 10.18500/1817-3020-2022-22-2-123-130, EDN: ERLGLP

This is an open access article distributed under the terms of Creative Commons Attribution 4.0 International License (CC-BY 4.0).
Published online: 
30.06.2022
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Language: 
English
Heading: 
Radiophysics, electronics, acoustics
Article type: 
Article
UDC: 
621.372.2
DOI: 
10.18500/1817-3020-2022-22-2-123-130
EDN: 
ERLGLP

Tamm resonances control in one-dimensional microwave photonic crystal for measuring parameters of heavily doped semiconductor layers

Autors: 
Skripal Alexander Vladimirovich, Saratov State University
Ponomarev Denis Viktorovich, Saratov State University
Komarov Andrey Aleksandrovich, Saratov State University
Sharonov Vasily Evgenievich, Saratov State University
Abstract: 

The possibility has been explored to control the photonic Tamm resonances (TRs) in the one-dimensional microwave photonic crystal (MPC) with the dielectric filling by changing the thickness of the MPC’s outer layer adjacent to the heavily doped layer of the semiconductor GaAs structure. The controlled photonic TRs have been used to measure the conductivity of the heavily doped semiconductor layer. It has been shown that depending on the conductivity of the layer the specific tuning of the TR frequency is necessary in order to achieve a high sensitivity of the TR to the change of the conductivity. The possibility of observing the plasma resonance in the infrared range has additionally allowed to determine the concentration and mobility of free charge carriers in the heavily doped layer of the GaAs structure.

Key words: 
Conductivity measurement
heavily doped semiconductor
microwave photonic crystals
plasma resonance
Tamm resonances
X-band
Acknowledgments: 
This work was supported by the Ministry of Science and Higher Education of the Russian Federation in the framework of the State task (project No. FSRR-2020-0005).
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Received: 
18.02.2022
Accepted: 
10.03.2022
Published: 
30.06.2022
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