Известия Саратовского университета.

Новая серия. Серия Физика

ISSN 1817-3020 (Print)
ISSN 2542-193X (Online)


Для цитирования:

Skripal A. V., Ponomarev D. V., Komarov A. A., Sharonov V. E. Tamm resonances control in one-dimensional microwave photonic crystal for measuring parameters of heavily doped semiconductor layers [Скрипаль А. В., Пономарев Д. В., Комаров А. А., Шаронов В. Е. Управление таммовскими резонансами в одномерных СВЧ фотонных кристаллах для измерения параметров сильнолегированных полупроводниковых слоев] // Известия Саратовского университета. Новая серия. Серия Физика. 2022. Т. 22, вып. 2. С. 123-130. DOI: 10.18500/1817-3020-2022-22-2-123-130


Статья опубликована на условиях лицензии Creative Commons Attribution 4.0 International (CC-BY 4.0).
Опубликована онлайн: 
30.06.2022
Полный текст в формате PDF(Ru):
(загрузок: 58)
Язык публикации: 
английский
Тип статьи: 
Научная статья
УДК: 
621.372.2

Tamm resonances control in one-dimensional microwave photonic crystal for measuring parameters of heavily doped semiconductor layers
[Управление таммовскими резонансами в одномерных СВЧ фотонных кристаллах для измерения параметров сильнолегированных полупроводниковых слоев]

Авторы: 
Скрипаль Александр Владимирович, Саратовский национальный исследовательский государственный университет имени Н. Г. Чернышевского
Пономарев Денис Викторович, Саратовский национальный исследовательский государственный университет имени Н. Г. Чернышевского
Комаров Андрей Александрович, Саратовский национальный исследовательский государственный университет имени Н. Г. Чернышевского
Шаронов Василий Евгеньевич, Саратовский национальный исследовательский государственный университет имени Н. Г. Чернышевского
Аннотация: 

Исследована возможность управления фотонными таммовскими резонансами в одномерном СВЧ фотонном кристалле с диэлектрическим заполнением с помощью изменения толщины слоя фотонного кристалла, граничащего с сильнолегированным слоем полупроводниковой GaAs структуры. Управляемые фотонные таммовские резонансы в микроволновом диапазоне частот использованы для измерения удельной электропроводности сильнолегированных полупроводниковых слоёв. Показано, что для достижения высокой чувствительности таммовского резонанса к изменению удельной электропроводности сильнолегированного слоя, необходима определенная перестройка частоты таммовского резонанса, величина которой определяется величиной удельной электропроводности сильнолегированного слоя. Возможность наблюдения плазменного резонанса в инфракрасном диапазоне позволило определить концентрацию и подвижность свободных носителей заряда в сильнолегированном слое полупроводниковой GaAs структуры.

Благодарности: 
Работа поддержана Минобрнауки России в рамках государственного задания (проект № FSRR-2020-0005).
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Поступила в редакцию: 
18.02.2022
Принята к публикации: 
10.03.2022
Опубликована: 
30.06.2022