For citation:
Kozhevnikov I. O., Mikhailov A. I., Bratashov D. N. Research of the Contact Pads Topology Influence on the Parameters Reproducibility of the Current Oscillations in Mesa-Planar Structures Based on Semi-Insulatinggallium Arsenide. Izvestiya of Saratov University. Physics , 2015, vol. 15, iss. 1, pp. 51-56. DOI: 10.18500/1817-3020-2015-15-1-51-56
Research of the Contact Pads Topology Influence on the Parameters Reproducibility of the Current Oscillations in Mesa-Planar Structures Based on Semi-Insulatinggallium Arsenide
Experimental results of research the influence of the electric field distribution between the pads of mesa-planar resistor structures based on semi-insulating n-GaAs are represented. These influence by changing pads topology (plane-parallel, flat-pointed, counter-pointed and concave-pointed) was studied for the current oscillations parameters (the threshold voltage, frequency and amplitude of current oscillations) reproducibility increasing. It was found that the structures with counter-pointed topology metal sites improves the concentration of the electric field at the tip and a narrows the field of current flow, has a highest reproducibility of parameters such as the magnitude of the current oscillations occurrence threshold voltage and the amplitude of oscillation. For structures with a plane-parallel contact form reproducibility of experimental measurements is the smallest due to the high influence of edge effects.
- Гуляев Ю. В. Акустоэлектроника : исторический обзор // УФН. 2005. Т. 175, № 8. С. 887–895.
- Щука А. А. Электроника / под ред. А. С. Сигова. СПб. : БХВ-Петербург, 2006. 800 с.
- Муравский Б. С., Рубцов Г. П., Григорьян Л. Р., Куликов О. Н. Электрофизические и фотоэлектрические свойства транзисторных структур с распределенным эмиттером и функциональные приборы на их основе // Журнал радиоэлектроники : электрон. журн. 2000. № 10. URL: http://jre.cplire.ru/alt/oct00/2/text.html (дата обращения: 30.03.2014).
- Neumann A. Slow domains in semi-insulating GaAs // J. Appl. Phys. 2001. Vol. 90, № 1. P. 1–26.
- Kiyama M., Tatsumi M., Yamada M. Electric-field-enhanced electron capture coefficient of EL2 level in semi-insulating GaAs // Appl. Phys. Lett. 2005. Vol. 86, № 1. P. 012102.
- Oliveira A. G. de, Ribeiro G. M., Albuquerque H. A., Moreira M. V. B., Rodrigues W. N., Gonzalez J. C., Rubinger R. M. Blockade of free carriers by hopping carriers leading to the low-frequency current oscillations in semi-insulating GaAs // Phys. Rev. B. 2006. Vol. 74, № 3. P. 035204.
- Михайлов А. И., Митин А. В., Кожевников И. О. Особенности возникновения устойчивых колебаний тока большой амплитуды в длинных высокоомных планарно-эпитаксиальных структурах на основе арсенида галлия // Микроэлектроника СВЧ : Всерос. конф. : сб. тр. СПб. : СПбГЭТУ, 2012. Т. 1/2. С. 49–53.
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