Izvestiya of Saratov University.
ISSN 1817-3020 (Print)
ISSN 2542-193X (Online)


сегнетоэлектрики

Voltage-capacitance Characteristics of MIS-structures Based on Ferroelectric Films

Metal–ferroelectric–semiconductor (MFS) heterostructures are created on n-type and p-type silicon substrates. Electronically-controlled capacitors are realized in MFS heterostructures. Measured parameters of electronically-controlled capacitors at 50 V bias voltage showed, that the stroke of voltage-capacitance characteristics of capacitors on the p-type silicon mirror reflexion of the stroke of voltage-capacitance characteristics of capacitors on the n-type silicon.