Izvestiya of Saratov University.
ISSN 1817-3020 (Print)
ISSN 2542-193X (Online)


photoluminescence

Effect of Small Doses of Gamma Radiation on the Optical Properties of Nanostructured Silicon Obtained by Metal-Stimulated Chemical Etching in situ

Background and Objectives: Porous silicon nanowires (SiNP) obtained by the method of metal stimulated chemical etching (EE method) are of great interest. The physical properties of this material depend significantly on the morphology of the nanostructures and their sizes. Given in the literature data on the effect of small doses of ionizing radiation on metals and alloys and the effect of irradiation on the properties of porous silicon and SiNP, makes sense to modify not only the substrate, but also the SiNP layer during its formation by irradiation.