Izvestiya of Saratov University.
ISSN 1817-3020 (Print)
ISSN 2542-193X (Online)


металл–диэлектрик–полупроводник

Influence of Plasma-Chemical Modification of the Surface on Transverse Electron Transport and VAC of Silicon MIS Structures

Background and Objectives: The laws governing the modification of the current-voltage characteristics of the metal-insulatorsemiconductor structures due to the formation of embedded surface potentials are investigated. Surface potentials are formed when an atomically clean surface of silicon crystals is produced using microwave plasma micromachining. The aim of the work is to study the effect of plasma micromachining in various chemically active gaseous media on the properties of silicon MIS structures.