Izvestiya of Saratov University.

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ISSN 2542-193X (Online)

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Mikhailov A. I., Mitin A. V. Space charge and current instabilities in structures based on semi-insulating gallium arsenide. Izvestiya of Saratov University. Physics , 2026, vol. 26, iss. 2, pp. 185-209. DOI: 10.18500/1817-3020-2026-26-2-185-209, EDN: THDIXH

This is an open access article distributed under the terms of Creative Commons Attribution 4.0 International License (CC-BY 4.0).
Published online: 
30.06.2026
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Language: 
Russian
Heading: 
Solid-state electronics, micro and nanoelectronics
Article type: 
Article
UDC: 
621.382.2/.3:004.942
DOI: 
10.18500/1817-3020-2026-26-2-185-209
EDN: 
THDIXH

Space charge and current instabilities in structures based on semi-insulating gallium arsenide

Autors: 
Mikhailov Aleksandr Ivanovich, Saratov State University
Mitin Anton V., Saratov State University
Abstract: 

Background and Objectives: Current instabilities, like many other phenomena in semiconductors and semiconductor structures, are determined by many internal and external factors, which makes it possible to create, using them, either simply all kinds of sensors for various physical effects, or active devices(generation and amplifiying), or to provide more complex processing of information signals. Therefore the object of research is to study the features of oscillation and wave processes occurring in a semiconductor structure based on semi-insulating gallium arsenide under localized optical effects and taking into account the dependence of the lifetime of charge carriers on their excess concentration. Two types of current instability are analyzed: Gunn effect and recombination instability. Materials and Methods: The research was conducted by numerically solving a system of equations based on a local field mathematical model that adequately describes the electronic processes occurring in the studied semiconductor structure. Results: New data have been obtained, established, and analyzed regarding the phenomena under study and their potential for practical applications. Conclusion: The research findings suggest that the studied physical phenomena in semiconductor structures based on semi-insulating gallium arsenide have promising applications in the development of functional microelectronics devices.

Key words: 
drift nonlinearity
concentration nonlinearity
local field model
high-resistance gallium arsenide
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Received: 
05.12.2025
Accepted: 
15.04.2026
Published: 
30.06.2026
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