Izvestiya of Saratov University.
ISSN 1817-3020 (Print)
ISSN 2542-193X (Online)

Raman scattering

Effect of Small Doses of Gamma Radiation on the Optical Properties of Nanostructured Silicon Obtained by Metal-Stimulated Chemical Etching in situ

Background and Objectives: Porous silicon nanowires (SiNP) obtained by the method of metal stimulated chemical etching (EE method) are of great interest. The physical properties of this material depend significantly on the morphology of the nanostructures and their sizes. Given in the literature data on the effect of small doses of ionizing radiation on metals and alloys and the effect of irradiation on the properties of porous silicon and SiNP, makes sense to modify not only the substrate, but also the SiNP layer during its formation by irradiation.

Optical Absorption and Raman Scattering in Doped Crystals TlGaSe2 and TlInS2

Background and Objectives. The TlGaSe2 and TlInS2 monocrystals are the А3В3С6 2 type ternary semiconductor compounds. Studies of TlGaSe2 and TlInS2 materials are carried out quite intensively due to the uniqueness of their optical and electrophysical properties and significant prospects for their practical use. At the same time, information about the effect of specific doping impurities on the properties of such materials is insufficient and often contradictory.