Izvestiya of Saratov University.
ISSN 1817-3020 (Print)
ISSN 2542-193X (Online)


Resonant Properties of Electronic Flows in Semiconductor Structures with Modulated Dielectric Permeability

It is shown that the directed self-organizing of an electronic flow in semiconductors may be caused by a mechanism based on interaction of the flow with heterogeneities formed by a fixed distribution of dielectric permeability. The behavior of resonant amplitude values of the flow speed in a quasiballistic mode is considered depending on heterogeneity factors.